EFFECT OF PROTON BOMBARDMENT ON PB0.76SN0.24TE

被引：12

作者：

TAO, TF

SUNIER, JW

WANG, CC

机构：

来源：

APPLIED PHYSICS LETTERS | 1972年 / 20卷 / 07期

关键词：

D O I：

10.1063/1.1654125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：235 / &

共 12 条

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AUKERMAN, LW .

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[2] ELECTRON IRRADIATION OF INDIUM ARSENIDE [J].

AUKERMAN, LW .

PHYSICAL REVIEW, 1959, 115 (05) :1133-1135

[3] ENERGY LEVELS IN IRRADIATED GERMANIUM [J].

BLOUNT, EI .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1218-1221

[4]

Bylander E. G., 1966, MATER SCI ENG, V1, P190

[5]

CALAWA AR, 1968, T METALL SOC AIME, V242, P374

[6] N-P JUNCTION PHOTOVOLTAIC DETECTORS IN PBTE PRODUCED BY PROTON BOMBARDMENT [J].

DONNELLY, JP ;

HARMAN, TC ;

FOYT, AG .

APPLIED PHYSICS LETTERS, 1971, 18 (06) :259-&

[7]

DONNELLY JP, 1971, SOLID STATE RESEARCH

[8] PREPARATION AND PROPERTIES OF PB1-X SNX TE EPITAXIAL FILMS [J].

FARINRE, TO ;

ZEMEL, JN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1970, 7 (01) :121-&

[9] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J].

FOYT, AG ;

HARMAN, TC ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1971, 18 (08) :321-&

[10] N-P JUNCTION PHOTODETECTORS IN INSB FABRICATED BY PROTON BOMBARDMENT [J].

FOYT, AG ;

LINDLEY, WT ;

DONNELLY, JP .

APPLIED PHYSICS LETTERS, 1970, 16 (09) :335-&

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