OBSERVATION OF INTERSUBBAND TRANSITIONS TO MOTIONALLY BOUND-STATES

被引：6

作者：

ZHANG, Y ^{[1
]}

ZHANG, A ^{[1
]}

SLINKMAN, J ^{[1
]}

DOEZEMA, RE ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05452

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10749

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the observation of resonant transitions to motionally bound subbands in an n-type InAs accumulation layer. The far-infrared transitions are observed in the pinning regime of Shubnikov-de Haas oscillations, which is a signature of motionally bound subbands, and at surface-electron densities that are in good agreement with a recent theoretical prediction.

引用

页码：10749 / 10751

页数：3

共 8 条

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