ELECTRICAL TRANSPORT STUDIES OF THE LA2-XSRXCUO4 SYSTEM NEAR THE METAL-INSULATOR-SEMICONDUCTOR TRANSITION AND THE EFFECT OF ZN DOPING ON LOCALIZATION

被引：12

作者：

AWANA, VPS ^{[1
]}

AGARWAL, SK ^{[1
]}

DAS, MP ^{[1
]}

NARLIKAR, AV ^{[1
]}

机构：

[1] AUSTRALIAN NATL UNIV,RES SCH PHYS SCI,CANBERRA,ACT 2601,AUSTRALIA

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1992年 / 4卷 / 21期

关键词：

D O I：

10.1088/0953-8984/4/21/012

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electrical transport properties of La2-xSrxCuO4 up to x = 0.4 have been systematically investigated. A gradual change taking place in the sequences semiconducting-non-superconducting, semiconducting-superconducting, metallic-superconducting and metallic-non-superconducting has been observed. The results provide the experimental evidence for a transition from metallic behaviour at high temperatures to a variable-range hopping (VRH) regime at low temperatures. A crossover from 3D VRH to 2D VRH has been observed when the system changes from a semiconducting-non-superconducting to a semiconducting-superconducting type. The samples with different Sr concentrations were further doped with zinc at the Cu site, and the resulting effect on superconductivity and normal-state resistivity has been examined. The two competing processes, namely thc increase in the hole concentration with Sr addition and the localization of charge carriers due to Zn substitution have been discussed.

引用

页码：4971 / 4980

页数：10

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