ELECTRICAL AND OPTICAL-PROPERTIES OF BORON DOPED AMORPHOUS SI PREPARED BY CVD METHOD

被引：8

作者：

MAKINO, T

NAKAMURA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1978年 / 17卷 / 10期

关键词：

D O I：

10.1143/JJAP.17.1897

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1897 / 1898

页数：2

共 8 条

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[2] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON [J].

CHITTICK, RC ;

ALEXANDE.JH ;

STERLING, HF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) :77-&

[3]

HIROSE M, 1977, 7TH P INT C AM LIQ S

[4] ANOMALOUS RESISTIVITY CHANGE IN B DOPED POLYCRYSTALLINE SI CAUSED BY BN FORMATION UNDER N2 HEAT-TREATMENT [J].

MAKINO, T ;

NAKAMURA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 (10) :1757-1764

[5] OPTICAL REFLECTION STUDIES OF DAMAGE IN ION IMPLANTED SILICON [J].

MCGILL, TC ;

KURTIN, SL ;

SHIFRIN, GA .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :246-+

[6]

Spear W. E., 1972, Journal of Non-Crystalline Solids, V8-10, P727, DOI 10.1016/0022-3093(72)90220-7

[7] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[8]

SPEAR WE, 1974, 5TH P INT C AM LIQ S

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