ELECTRON-TRANSPORT THROUGH PLANAR DEFECTS - A NEW DESCRIPTION OF GRAIN-BOUNDARY SCATTERING

被引：14

作者：

KNABCHEN, A

机构：

[1] Inst. fur Theor. Phys., Tech. Univ. Chemnitz

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1991年 / 3卷 / 36期

关键词：

D O I：

10.1088/0953-8984/3/36/004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Based on a recently developed superposition method, the resistance of a homogeneous bulk material perturbed by a planar defect is calculated. A detailed analysis of the evolving residual-resistivity dipole surrounding the layer is given. Transmission and reflection of attenuated propagating waves on planar defects describe the essential features of grain boundary scattering. In this connection our result can be compared with experimental data and well known theories on polycrystalline metals.

引用

页码：6989 / 6999

页数：11

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