ELECTRONIC STOPPING POWER THRESHOLD OF DAMAGE CREATION IN YTTRIUM-IRON-GARNET

被引：18

作者：

MEFTAH, A

HAGEALI, M

STOQUERT, JP

STUDER, F

TOULEMONDE, M

机构：

[1] CTR RECH NUCL,PHASE GRP,F-67037 STRASBOURG,FRANCE

[2] ISMRA UNIV,CRISTALLOG & SCI MAT LAB,F-14050 CAEN,FRANCE

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1993年 / 126卷 / 1-4期

关键词：

D O I：

10.1080/10420159308219720

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Electronic stopping power threshold of damage creation in yttrium iron garnet (YIG) has been determined by extrapolation using the known model for nuclear and electronic damage creation calibrated by 2 MeV alpha and 510 MeV argon irradiations respectively. This value is equal 4.5+/-1.0 keV/nm and its is three times lower than the dE/dx value at which chemical etching appears indicating that electronic stopping power damage can exist at very low value of dE/dx for non radiolytic insulating materials.

引用

页码：251 / 254

页数：4

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