P-N JUNCTIONS IN GAP WITH EXTERNAL ELECTROLUMINESCENCE EFFICIENCY -2 PERCENT AT 25 DEGREES C

被引：50

作者：

LOGAN, RA

WHITE, HG

TRUMBORE, FA

机构：

来源：

关键词：

D O I：

10.1063/1.1754913

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：206 / &

共 6 条

[1] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS
CHYNOWETH, A
LOGAN, RA
FELDMANN, WL
[J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &
[2] ELECTRICAL AND ELECTROLUMINESCENT PROPERTIES OF GALLIUM PHOSPHIDE DIFFUSED P-N JUNCTIONS
GERSHENZON, M
LOGAN, RA
NELSON, DF
[J]. PHYSICAL REVIEW, 1966, 149 (02): : 580 - +
[3] Goldstein B., 1966, PHYS REV, V148, P715
[4] PREPARATION AND PROPERTIES OF SOLUTION-GROWN EPITAXIAL P-N JUNCTIONS IN GAP
LORENZ, MR
PILKUHN, M
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (11) : 4094 - &
[5] SAH CT, 1957, P IRE, V45, P1288
[6] TRUMBORE FA, IN PRESS