ELECTRONIC-PROPERTIES OF IN0.53GA0.47AS-INP SINGLE QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：7

作者：

FREI, M ^{[1
]}

TSUI, DC ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 10期

关键词：

D O I：

10.1063/1.98095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：606 / 608

页数：3

共 19 条

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