ELECTRONIC-PROPERTIES OF IN0.53GA0.47AS-INP SINGLE QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY

被引：7

作者：

FREI, M ^{[1
]}

TSUI, DC ^{[1
]}

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 10期

关键词：

D O I：

10.1063/1.98095

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：606 / 608

页数：3

共 19 条

[11] TWO-DIMENSIONAL ELECTRON-GAS IN A SELECTIVELY DOPED INP/IN0.53GA0.47AS HETEROSTRUCTURE GROWN BY CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY [J].

TAKIKAWA, M ;

KOMENO, J ;

OZEKI, M .

APPLIED PHYSICS LETTERS, 1983, 43 (03) :280-282

[12] TWO-DIMENSIONAL ELECTRON-GAS IN A GA0.47IN0.53AS/INP HETEROJUNCTION GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

CHANG, AM ;

DITZENBERGER, JA ;

TABATABAIE, N .

APPLIED PHYSICS LETTERS, 1986, 49 (15) :960-962

[13] GROWTH OF INP, GAAS, AND IN0.53GA0.47AS BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :666-670

[14] GA0.47IN0.53AS/INP MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY OPERATING AT 1.53 MU-M [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1984, 44 (03) :288-290

[15] EXTREMELY HIGH-QUALITY GA0.47IN0.53AS/INP QUANTUM-WELLS GROWN BY CHEMICAL BEAM EPITAXY [J].

TSANG, WT ;

SCHUBERT, EF .

APPLIED PHYSICS LETTERS, 1986, 49 (04) :220-222

[16] HIGH-FIELD ELECTRON-TRANSPORT IN N-INP/GAINAS TWO-DIMENSIONAL ELECTRON-GAS [J].

TSUBAKI, K ;

FUKUI, T ;

SAITO, H .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :875-877

[17] TRANSPORT STUDIES OF GAAS1-XSBX-ALYGA1-YAS STRAINED-LAYER SUPERLATTICES [J].

WEI, HP ;

CHOU, MJ ;

TSUI, DC ;

KLEM, J ;

MORKOC, H ;

WAGNER, RJ .

APPLIED PHYSICS LETTERS, 1984, 45 (12) :1292-1294

[18] PICOSECOND PULSE GENERATION IN OPTICALLY PUMPED, ULTRASHORT-CAVITY, INGAASP, INP, AND INGAAS FILM LASERS [J].

WIESENFELD, JM ;

STONE, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (01) :119-132

[19]

WINHORN TH, 1982, IEEE ELECTRON DEVICE, V3, P18

← 1 2 →