THERMAL-OXIDATION OF ION-IMPLANTED COPPER

Twenty-two chemical species were implanted in copper and the subsequent thermal oxidation behaviour was investigated. Ion dose and implantation energy dependences are observed but the implant location and profile are of equivalent importance in the determination of the oxidation kinetics. A variety of electrical measurements were made on the oxide layers in an attempt to verify the p-n junction model proposed by J.R. Morris et al. on the basis of a smaller range of samples. The findings yield only limited support to this model and suggest that the oxidation behaviour for a particular implant will be determined by impurity concentration and distribution with depth, implantation-induced radiation damage and stress, and the chemical nature of the implanted species.