GROWTH-PROCESSES IN THE INITIAL-STAGE OF GE FILMS ON (811)SI SURFACES BY GEH4 SOURCE MOLECULAR-BEAM EPITAXY

被引：17

作者：

KOIDE, Y

ZAIMA, S

ITOH, K

OHSHIMA, N

YASUDA, Y

机构：

[1] Department of Crystalline Materials Science, School of Engineering, Nagoya University, Chikusa-ku, Nagoya 464-01, Furo-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 05期

关键词：

D O I：

10.1063/1.346573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth process in the initial stage of growth of Ge films on (811)Si substrate surfaces by GeH4 source molecular-beam epitaxy has been studied by in situ reflection high-energy electron diffraction observation. It has been found that a strained film by the monolayer overgrowth mode is formed initially with an epitaxial relationship of the parallel orientation, and that plate-shaped Ge islands with (811) facets are grown early in the growth, but that the predominant facet changes to {311} and the (100) planes with further growth. These growth processes are similar to those of Ge films on (100)Si surfaces reported previously. It is concluded that Ge islands with {811} facets are energetically stable in the initial stage of the island growth on the (811)Si surfaces as well as on the (100)Si surfaces.

引用

页码：2164 / 2167

页数：4

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