ROUGHNESS EVALUATION OF THERMALLY OXIDIZED SI(111) SURFACES BY SCANNING FORCE MICROSCOPY

被引：19

作者：

SUZUKI, M

HOMMA, Y

KUDOH, Y

YABUMOTO, N

机构：

[1] Center for Analytical Technology and Characterization, NTT Interdisciplinary Research Laboratories, Musashino Tokyo

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1993年 / 32卷 / 3B期

关键词：

SI(111); THERMAL OXIDATION; ROUGHNESS; SCANNING FORCE MICROSCOPY; SURFACE STRUCTURE;

D O I：

10.1143/JJAP.32.1419

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We used scanning force microscopy to evaluate the surface roughness of thermally oxidized Si(111). The initial surface, before oxidation, consisted of atomically flat terraces containing monoatomic steps and stepbands. The morphology of 10-nm-thick oxide surfaces formed at 800 to 1200-degrees-C was roughly similar to that of the initial surface. It is also revealed that a monoatomic step was retained on a 100-nm-thick oxide layer formed at 1100-degrees-C. The surface roughness tended to decrease as the oxidation temperature increased.

引用

页码：1419 / 1422

页数：4

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