STRUCTURE AND THERMAL-STABILITY OF CU-IN PRECIPITATES AND THEIR ROLE IN THE SEMIINSULATING BEHAVIOR OF INPCU

被引：8

作者：

LEON, RP ^{[1
]}

WERNER, P ^{[1
]}

EDER, C ^{[1
]}

WEBER, ER ^{[1
]}

机构：

[1] LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 21期

关键词：

D O I：

10.1063/1.108121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InP was found to be semi-insulating after Cu diffusion. This conversion of both n-In P and p-InP was ascribed to the presence of Cu-In precipitates that act as buried Schottky barriers. The thermal stability of both the precipitates and the electrical properties of InP:Cu were studied after high temperature annealing treatments. Atomic resolution microscopy was used to determine the structure of these precipitates. Diffraction studies of some of these inclusions show that they have the structure of the metallic hexagonal compound Cu16In9. The concentration of Cu-In precipitates was found to be comparable with what our calculations show would achieve intrinsic behavior due to the effect of the metallic inclusions.

引用

页码：2545 / 2547

页数：3