STUDY OF HYDROGEN INCORPORATION IN MOS-STRUCTURES AFTER VARIOUS PROCESS STEPS USING NUCLEAR-REACTION ANALYSIS (NRA)

We present hydrogen depth profiles in thin multilayer films determined by the use of the (H(N,alphagamma)C)-H-1-N-15-C-12 nuclear reaction analysis method. Samples of aluminum gate MOS capacitors with a different annealing history show significant differences in hydrogen content in the bulk SiO2 as well as at the interfaces of the MOS system. The measured profiles are brought into correlation with the radiation induced increase of oxide charge density N(ot) and interface state density N(it). Along with this study we describe the use of a computer program to simulate the folding of certain model hydrogen profiles with the excitation function of the NRA method to get the true hydrogen distribution out of the measured gamma ray yield.