SIMPLE ANALYSIS OF TRANSIENT PHOTOCONDUCTIVITY FOR DETERMINATION OF LOCALIZED-STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS USING LAPLACE TRANSFORM

被引：21

作者：

NAITO, H

OKUDA, M

机构：

[1] Department of Physics and Electronics, University of Osaka Prefecture, Sakai, Osaka 593, Gakuen-cho

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 07期

关键词：

D O I：

10.1063/1.358582

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method has been proposed for the determination of localized-state distributions in amorphous semiconductors from transient photoconductivity using Laplace transforms [H. Naito, J. Ding, and M. Okuda, Appl. Phys. Lett. 64, 1830 (1994)]. The method is applicable to both pre- and postrecombination regimes of transient photoconductivity, and to amorphous semiconductors exhibiting either nondispersive or dispersive transport. To simplify the analysis of the method, a new approach with the same advantages of the method is presented. © 1995 American Institute of Physics.

引用

页码：3541 / 3542

页数：2

共 6 条

[1]

DING J, 1994, DENSHI SHASHIN GAKKA, V33, P135

[2]

LOOK DC, 1983, SEMICONDUCT SEMIMET, P19

[3] DETERMINATION OF GAP-STATE DISTRIBUTIONS IN AMORPHOUS-SEMICONDUCTORS FROM TRANSIENT PHOTOCURRENTS USING A FOURIER-TRANSFORM TECHNIQUE [J].