SINGLE-ELECTRON TUNNELING THROUGH SEMICONDUCTING NANOSTRUCTURES

被引:4
作者
HAUG, RJ
机构
[1] Max-Planck-Institut für Festkörperforschung
关键词
SEMICONDUCTORS; TRANSPORT EXPERIMENTS; CHARGING EFFECTS;
D O I
10.1016/0013-4686(95)00059-N
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Tunneling through semiconducting nanostructures is determined by the interplay between charging effects and the discrete level spectrum originating from the three-dimensional confinement. This interplay is studied in linear and nonlinear transport and for single and multiple structures. Several realizations and applications are discussed.
引用
收藏
页码:1283 / 1292
页数:10
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