AN INTEGRATED SAFETY SYSTEM FOR CBE

CBE of GaAs involves hazardous precursors such as triethylgallium and arsine. Although these materials are currently used safely in a large number of CBE and MOVPE growth systems there is increasing world-wide concern about the use of such hazardous substances in the semiconductor industry, and about the wider environmental issues of toxic waste disposal and atmospheric pollution. This paper describes the passive safety features of the growth system installed at Liverpool University, and the active safety system featuring a system of interlocks for automatic shutdown, including toxic gas detection. The growth system is also designed to minimise emissions of unreacted precursors and is fitted with an exhaust scrubber unit. © 1990.