INTERFACE ROUGHNESS AND PERIOD VARIATIONS IN THE AIGAAS SYSTEM GROWN BY MOLECULAR-BEAM EPITAXY

被引：12

作者：

FEWSTER, PF

ANDREW, NL

CURLING, CJ

机构：

[1] Philips Res. Labs., Redhill

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 01期

关键词：

D O I：

10.1088/0268-1242/6/1/002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The interface extent on a large range of Al0.35Ga0.65As/GaAs and AlAs/GaAs multiple quantum well structures has been obtained by x-ray diffraction. The average interface extent perpendicular to the growth direction from GaAs to Al0.35Ga0.65As or AlAs is of the order of 3.8 monolayers, whereas the 'inverted' or opposite interface for both structures is broader: 4.9 monolayers for AlAs to GaAs and 5.6 monolayers for Al0.35Ga0.65As to GaAs. These interface extents represent significant intermixing on only a few monolayers. The sensitivity and the reproducibility of these results is discussed.

引用

页码：5 / 10

页数：6

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