LIFETIME IN P-TYPE SILICON

被引：25

作者：

BLAKEMORE, JS

机构：

来源：

PHYSICAL REVIEW | 1958年 / 110卷 / 06期

关键词：

D O I：

10.1103/PhysRev.110.1301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1301 / 1308

页数：8

共 26 条

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BATTEY, JF ;

BAUM, RM .

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BEMSKI, G .

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[3]

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[4]

BLAKEMORE JS, 1958, B AM PHYS SOC 2, V3, P101

[5]

BLAKEMORE JS, 1957, B AM PHYS SOC 2, V2, P153

[6] PROPERTIES OF SILICON DOPED WITH MANGANESE [J].

CARLSON, RO .

PHYSICAL REVIEW, 1956, 104 (04) :937-941

[7] THE STATISTICS OF DIVALENT IMPURITY CENTRES IN A SEMICONDUCTOR [J].

CHAMPNESS, CH .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (12) :1335-1339

[8]

CLARKE DH, 1957, J ELECTRON CONTR, V3, P375

[9]

COLLINS, 1957, PHYS REV, V105, P1168

[10]

COLLINS CB, 1956, B AM PHYS SOC 2, V1, P49