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EFFECT OF CARRIER TRANSPORT ON SURFACE PHOTOVOLTAGE IN THIN SEMICONDUCTOR-FILMS

被引：3
作者：
DHARIWAL, SR
DEORAJ, BM
机构：
[1] Department of Physics, University of Jodhpur, Jodhpur
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1992年 / 26卷 / 03期
关键词：
D O I：
10.1016/0927-0248(92)90064-V
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
An expression for surface photovoltage in thin semiconductor films has been obtained by considering the effect of coupling between the front and the back surface barriers because of carrier diffusion. Application of the result to the constant surface photovoltage method for the minority carrier diffusion length measurement has been discussed for thin films of hydrogenated amorphous silicon.
引用
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页码：243 / 258
页数：16
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