ATOMIC MODELING OF HOMOGENEOUS NUCLEATION OF DISLOCATIONS FROM CONDENSATION OF POINT-DEFECTS IN SILICON

被引：97

作者：

TAN, TY

机构：

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1981年 / 44卷 / 01期

关键词：

D O I：

10.1080/01418618108244497

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：101 / 125

页数：25

共 23 条

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