LIQUID-PHASE EPITAXIAL-GROWTH OF (HG1-XCDX)TE FROM TELLURIUM-RICH SOLUTIONS USING A CLOSED TUBE TIPPING TECHNIQUE

被引：48

作者：

MROCZKOWSKI, JA

VYDYANATH, HR

机构：

来源：

关键词：

D O I：

10.1149/1.2127476

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：655 / 661

页数：7

共 12 条

[1]

BLAIR J, 1961, METALLURGY ELEMENTAL, V12, P393

[2]

BREBRICK RF, COMMUNICATION

[3]

CROSSLEY MB, 1974, J CRYST GROWTH, V27, P35

[4]

HARMAN TC, 1979, 1979 EL MAT C

[5]

MROCZKOWSKI J, 1979, F3361573C5156 CONTR

[6]

MROCZKOWSKI JA, UNPUBLISHED

[7]

SCHMIT JL, 1979, APPL PHYS LETT, V35

[8] ENERGY GAP IN HG1-XCDXTE BY OPTICAL ABSORPTION [J].

SCOTT, MW .

[9] ELECTRON MOBILITY IN HG1-X CDX TE [J].

SCOTT, W .

[10]

Van der Pauw L.J., 1958, PHILIPS TECH REV, V20, P220, DOI DOI 10.4236/JMP.2013.411179