ION-IMPLANTED WAVE-GUIDES IN DOPED LINBO3

被引：11

作者：

CHANDLER, PJ

ZHANG, L

TOWSEND, PD

机构：

[1] School of Mathematical and Physical Sciences, University of Sussex, Brighton

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 05期

关键词：

Integrated lasers; Ion implantation; Optical waveguides;

D O I：

10.1049/el:19900218

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It has been shown that the fabrication of optical waveguides in LiNbO3 by ion implantation is not affected by the presence of Nd or Cr in low concentration, or by 5% MgO. These results are compared with those for stoichiometric changes. The implication for integrated laser devices are discussed. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：332 / 334

页数：3

共 15 条

[1]

BUCHAL CH, 1989, NATO ASI SERIES E, V170, P389

[2]

CHANDLER PJ, 1989, ELECTRON LETT, V25, P985, DOI 10.1049/el:19890659

[3] A NEW APPROACH TO THE DETERMINATION OF PLANAR WAVE-GUIDE PROFILES BY MEANS OF A NONSTATIONARY MODE INDEX CALCULATION [J].