DISTRIBUTION OF ANTIMONY IN THE OXIDE LAYER FORMED BY POTENTIOSTATIC OXIDATION OF PB-SB ALLOY

被引:8
作者
ARIFUKU, F
YONEYAMA, H
TAMURA, H
机构
[1] Department of Applied Chemistry, Faculty of Engineering, Osaka University, Osaka, Suita
关键词
D O I
10.1007/BF00610952
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The distribution of antimony within the oxide films on Pb-Sb alloy prepared by potentiostatic oxidation in H2SO4 solutions was examined by SIMS. The study of oxide films prepared by applying different potentials for three hours showed that two types of film were obtained depending on whether the potential was more negative or more positive than 1·5 V. Antimony profiles were obtained for films at several stages in the initial growth. It was found that antimony was retained in the oxide film at 1·5 V during both nucleation and two- or three-dimensional growth of PbO2 and at 1·6 V during the lateral overlaps of three-dimensional centres of PbO2. Relationships between the antimony distribution profiles and the oxide film growth are discussed. © 1979 Chapman and Hall Ltd.
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页码:635 / 640
页数:6
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