ISOELECTRONIC TRAP BISMUTH IN INDIUM PHOSPHIDE

[1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2

[2] ZEEMAN EFFECT AND CRYSTAL-FIELD SPLITTING OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1064 - &

[3] INTERIMPURITY RECOMBINATIONS INVOLVING ISOELECTRONIC TRAP BISMUTH IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1969, 179 (03): : 754 - &

[4] EVIDENCE FOR DONOR-ACCEPTOR RECOMBINATION IN INP BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (04) : 445 - &

[5] OPTICAL FREQUENCIES AND DIELECTRIC CONSTANTS OF INP [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (15) : 1057 - &

[6] A THEORY OF EDGE-EMISSION PHENOMENA IN CDS, ZNS AND ZNO [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 110 - 119

[7] ISOELECTRONIC DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

[8] ISELER GW, J LUM, V3

[9] JOYCE BD, 1970, S GAAS RELATED COMPO, P61

[10] NELSON H, 1963, RCA REV, V24, P603

[1] [Anonymous], 1970, J LUMIN, DOI DOI 10.1016/0022-2313(70)90054-2

[2] ZEEMAN EFFECT AND CRYSTAL-FIELD SPLITTING OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1969, 185 (03): : 1064 - &

[3] INTERIMPURITY RECOMBINATIONS INVOLVING ISOELECTRONIC TRAP BISMUTH IN GALLIUM PHOSPHIDE [J]. PHYSICAL REVIEW, 1969, 179 (03): : 754 - &

[4] EVIDENCE FOR DONOR-ACCEPTOR RECOMBINATION IN INP BY TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (04) : 445 - &

[5] OPTICAL FREQUENCIES AND DIELECTRIC CONSTANTS OF INP [J]. SOLID STATE COMMUNICATIONS, 1969, 7 (15) : 1057 - &

[6] A THEORY OF EDGE-EMISSION PHENOMENA IN CDS, ZNS AND ZNO [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 10 (2-3) : 110 - 119

[7] ISOELECTRONIC DONORS AND ACCEPTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (06) : 312 - &

[8] ISELER GW, J LUM, V3

[9] JOYCE BD, 1970, S GAAS RELATED COMPO, P61

[10] NELSON H, 1963, RCA REV, V24, P603