HIGH-EFFICIENCY KU-BAND HBT AMPLIFIER WITH 1W CW OUTPUT POWER

被引：7

作者：

BARTUSIAK, P

HENDERSON, T

KIM, T

KHATIBZADEH, A

BAYRAKTAROGLU, B

机构：

[1] Texas Instruments Incorporated, Dallas, TX 75265, PO Box 655936

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 23期

关键词：

MICROWAVE AMPLIFIERS; AMPLIFIERS; MICROWAVE DEVICES AND COMPONENTS;

D O I：

10.1049/el:19911354

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact, high-voltage AlGaAs/GaAs HBT was developed for applications in the Ku band using carbon-doped based structures. A single unit-cell device, operating under common-emitter mode and 10 V collector bias, produced 1.0 W CW output power at 15 GHz with 5.0 dB gain and 42% power-added efficiency. The power density of the device was a record 5.6 W/mm of emitter length.

引用

页码：2189 / 2190

页数：2

共 6 条

[1] BAYRAKTAROGLU B, 1989, GAAS IC SYMPOSIUM /, P271
[2] Bayraktaroglu B., 1990, IEEE 1990 Microwave and Millimeter-Wave Monolithic Circuits Symposium. Digest of Papers. (Cat. No.90CH2869-6), P43, DOI 10.1109/MCS.1990.110935
[3] BAYRAKTAROGLU B, 1987, IEEE T MICROW THEORY, P969
[4] KHATIBZADEH MA, 1990, IEEE T MICROW THEORY, P993
[5] ULTRAHIGH POWER EFFICIENCY OPERATION OF COMMON-EMITTER AND COMMON-BASE HBTS AT 10-GHZ
WANG, NL
SHENG, NH
CHANG, MF
HO, WJ
SULLIVAN, GJ
SOVERO, EA
HIGGINS, JA
ASBECK, PM
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1990, 38 (10) : 1381 - 1398
[6] WANG NL, 1990, IEEE T MICROW THEORY, P997

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