GAP LIQUID-PHASE EPITAXIAL-GROWTH USING A VERTICAL FURNACE SYSTEM

被引：8

作者：

AKITA, K ^{[1
]}

NAKAI, S ^{[1
]}

KINUGASA, T ^{[1
]}

KOTANI, T ^{[1
]}

DAZAI, K ^{[1
]}

RYUZAN, O ^{[1
]}

机构：

[1] FUJITSU LABS LTD,KOBE,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1973年 / 12卷 / 05期

关键词：

D O I：

10.1143/JJAP.12.631

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：631 / 635

页数：5

共 8 条

[1]

Honig R. E, 1957, RCA REV, V18, P195

[2] EFFICIENT GREEN ELECTROLUMINESCENT JUNCTIONS IN GAP [J].

LOGAN, RA ;

WHITE, HG ;

WIEGMANN, W .

SOLID-STATE ELECTRONICS, 1971, 14 (01) :55-&

[3]

Peaker A. R., 1972, Journal of Crystal Growth, V13-14, P651, DOI 10.1016/0022-0248(72)90536-2

[4] MEASUREMENT OF DOPING PROFILES IN THICK EPITAXIAL LAYERS OF GAP USING SCHOTTKY BARRIER C-V DATA [J].

PEAKER, AR .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1407-&

[5] DISTRIBUTION OF IMPURITIES IN ZN, O-DOPED GAP LIQUID PHASE EPITAXY LAYERS [J].

SAUL, RH ;

HACKETT, WH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (07) :921-&

[6] EFFICIENT GREEN ELECTROLUMINESCENCE FROM GAP P-N JUNCTIONS GROWN BY LIQUID-PHASE EPITAXY [J].

SHIH, KK ;

WOODALL, JM ;

BLUM, SE ;

FOSTER, LM .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (06) :2962-&

[7] SOLUBILITY AND ELECTRICAL BEHAVIOR OF ZINC SULFUR SELENIUM AND TELLURIUM IN GALLIUM PHOSPHIDE [J].

TRUMBORE, FA ;

WHITE, HG ;

KOWALCHIK, M ;

LOGAN, RA ;

LUKE, CL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) :782-+

[8] GAP SURFACE-BARRIER DIODES [J].

WHITE, HG ;

LOGAN, RA .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (07) :1990-&

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