SIMULATION OF SINGLE-ELECTRON LOGIC-CIRCUITS

被引：40

作者：

KUWAMURA, N

TANIGUCHI, K

HAMAGUCHI, C

机构：

[1] Faculty of Engineering, Osaka University, Suita

来源：

ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS | 1994年 / 77卷 / 09期

关键词：

SINGLE-ELECTRON TUNNELING; MONTE CARLO SIMULATION; COULOMB BLOCKAGE; QUASI-CMOS INVERTER;

D O I：

10.1002/ecjb.4420770908

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using the Monte Carlo simulation which can handle the motion of each electron, the transient operation characteristic of a quasi-CMOS inverter circuit proposed by Tucker [1] was evaluated. It was found that: (1) the output voltage of the inverter circuit depends on the load capacitance, and (2) the propagation delay time can be as short as 10 ps if a tunnel junction with a capacitance of 1 aF is formed. In addition, by evaluating the standard deviation of the inverter output signal, the limit of operating temperature for the integrated circuit was analyzed quantitatively.

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收藏

页码：65 / 73

页数：9

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