ELECTRICAL-PROPERTIES OF BETA-GA2O3 SINGLE-CRYSTALS .2.

被引：85

作者：

HARWIG, T

SCHOONMAN, J

机构：

来源：

关键词：

D O I：

10.1016/0022-4596(78)90066-X

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

引用

页码：205 / 211

页数：7

共 19 条

[11] OPTICAL AND ELECTRICAL PROPERTIES OF DOPED IN2O3 FILMS [J].

KOSTLIN, H ;

JOST, R ;

LEMS, W .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (01) :87-93

[12]

KROGER FA, 1974, CHEMISTRY IMPERFECT

[13] SOME ELECTRICAL PROPERTIES OF SEMICONDUCTOR BETA-GA2O3 [J].

LORENZ, MR ;

WOODS, JF ;

GAMBINO, RJ .

[14]

MEYER W, 1937, Z TECH PHYS, V18, P588

[15]

Sasaki T., 1974, P I NAT SCI NIHON U, V9, P29

[16]

SAURAT M, 1971, REV INT HAUTES TEMP, V8, P291

[17]

SCHAFER MW, 1972, J PHYS CHEM SOLIDS, V33, P2251

[18] PHASE EQUILIBRIUM RELATIONS IN SC2O3-GA2O3 SYSTEM [J].

SCHNEIDER, SJ ;

WARING, JL .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1963, A 67 (01) :19-+

[19]

SCHOCKLEY W, 1950, ELECTRONS HOLES SEMI