A NOVEL TRAPATT OSCILLATOR DESIGN

被引：10

作者：

EVANS, WJ

SEIDEL, TE

SCHARFET.DL

机构：

来源：

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1970年 / 58卷 / 08期

关键词：

D O I：

10.1109/PROC.1970.7914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1294 / &

共 5 条

[1] IMPROVED PERFORMANCE OF CW SILICON TRAPATT OSCILLATORS [J].

EVANS, WJ ;

JOHNSTON, RL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (05) :845-+

[2]

EVANS WJ, 1969, IEEE T MICROWAVE THE, VMT17, P1060

[3]

EVANS WJ, TO BE PUBLISHED

[4] DOUBLE-DRIFT-REGION (P+PNN+) AVALANCHE DIODE OSCILLATORS [J].

SCHARFET.DL ;

EVANS, WJ ;

JOHNSTON, RL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07) :1131-&

SEIDEL, TE ;

SCHARFET.DL .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (07) :1135-&