ELECTRICAL PROPERTIES OF ELECTRON-IRRADIATED GAAS

[1] RADIATION EFFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +

[2] ANNEALING OF ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &

[3] AUKERMAN LW, 1968, SEMICONDUCT SEMIMET, V4, pCH6

[4] AUKERMAN LW, 1961, 1960 P INT C SEM PHY, P946

[5] CORBETT JW, 1971, RADIATION EFFECTS SE

[6] DISPLACEMENT ENERGY IN GAAS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5371): : 151 - &

[7] GRIMSHAW JA, 1964, RADIATION EFFECTS SE, P377

[8] JEONG MU, 1971, RAD EFFECTS SEMICOND, P287

[9] Kahan A., 1971, Radiation Effects, V9, P99, DOI 10.1080/00337577108242040

[10] KALMA AH, 1972, JUL INT C DEF SEM RE

[1] RADIATION EFFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +

[2] ANNEALING OF ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1962, 127 (05): : 1576 - &

[3] AUKERMAN LW, 1968, SEMICONDUCT SEMIMET, V4, pCH6

[4] AUKERMAN LW, 1961, 1960 P INT C SEM PHY, P946

[5] CORBETT JW, 1971, RADIATION EFFECTS SE

[6] DISPLACEMENT ENERGY IN GAAS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1964, 84 (5371): : 151 - &

[7] GRIMSHAW JA, 1964, RADIATION EFFECTS SE, P377

[8] JEONG MU, 1971, RAD EFFECTS SEMICOND, P287

[9] Kahan A., 1971, Radiation Effects, V9, P99, DOI 10.1080/00337577108242040

[10] KALMA AH, 1972, JUL INT C DEF SEM RE