DEPENDENCE OF FREE-CARRIER FARADAY ELLIPTICITY IN SEMICONDUCTORS ON SCATTERING MECHANISMS

被引：25

作者：

FURDYNA, JK

BRODWIN, ME

机构：

来源：

PHYSICAL REVIEW | 1961年 / 124卷 / 03期

关键词：

D O I：

10.1103/PhysRev.124.740

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：740 / &

共 10 条

[1] BLATT FJ, 1957, SOLID STATE PHYSICS, V4, P238
[2] DINGLE RB, 1957, APPL SCI RES HAGUE, VB6, P245
[3] DINGLE RB, 1957, APPL SCI RES HAGUE, VB6, P144
[4] MICROWAVE FARADAY EFFECT IN SILICON AND GERMANIUM
FURDYNA, JK
BROERSMA, S
[J]. PHYSICAL REVIEW, 1960, 120 (06): : 1995 - 2003
[5] FURDYNA JK, U
[6] TRANSPORT PROPERTIES OF A MANY-VALLEY SEMICONDUCTOR
HERRING, C
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1955, 34 (02): : 237 - 290
[7] LAX B, 1955, PHYS REV, V98, P549
[8] FARADAY EFFECT IN GERMANIUM AT ROOM TEMPERATURE
RAU, RR
CASPARI, ME
[J]. PHYSICAL REVIEW, 1955, 100 (02): : 632 - 639
[9] STEPHEN MJ, 1959, J PHYS CHEM SOLIDS, V9, P43
[10] WILSON AH, 1954, THEORY METALS, P231