CAPACITY OF SEMICONDUCTOR ELECTRODES WITH MULTIPLE BULK ELECTRONIC STATES .2. APPLICATIONS TO AMORPHOUS-SEMICONDUCTOR ELECTRODES

被引：38

作者：

DEAN, MH ^{[1
]}

STIMMING, U ^{[1
]}

机构：

[1] COLUMBIA UNIV,DEPT CHEM ENGN & APPL CHEM,ELECTROCHEM LAB,NEW YORK,NY 10027

来源：

JOURNAL OF PHYSICAL CHEMISTRY | 1989年 / 93卷 / 24期

关键词：

D O I：

10.1021/j100361a018

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：8053 / 8059

页数：7

共 17 条

[1] A THEORY OF CAPACITANCE-VOLTAGE MEASUREMENTS ON AMORPHOUS-SILICON SCHOTTKY BARRIERS [J].

ABRAM, RA ;

DOHERTY, PJ .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (02) :167-176

[2] A MATHEMATICAL-MODEL FOR THE AC IMPEDANCE OF SEMICONDUCTING ELECTRODES [J].

BONHAM, DB ;

ORAZEM, ME .

AICHE JOURNAL, 1988, 34 (03) :465-473

[3] IRON(III)-TITANIUM(IV)-OXIDE ELECTRODES - THEIR STRUCTURAL, ELECTROCHEMICAL AND PHOTOELECTROCHEMICAL PROPERTIES [J].

DANZFUSS, B ;

STIMMING, U .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1984, 164 (01) :89-119

[4] ON THE EVALUATION OF THE FLAT-BAND POTENTIAL FROM PHOTOCURRENT MEASUREMENTS [J].

DEAN, MH ;

NEWMARK, AR ;

STIMMING, U .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1988, 244 (1-2) :307-310

[5] CAPACITY OF SEMICONDUCTOR ELECTRODES WITH MULTIPLE BULK ELECTRONIC STATES .1. MODEL AND CALCULATIONS FOR DISCRETE STATES [J].

DEAN, MH ;

STIMMING, U .

JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1987, 228 (1-2) :135-151

[6] THE ELECTRONIC-PROPERTIES OF DISORDERED PASSIVE FILMS [J].

DEAN, MH ;

STIMMING, U .

CORROSION SCIENCE, 1989, 29 (2-3) :199-211

[7] INTERPRETATION OF MOTT-SCHOTTKY PLOTS DETERMINED AT SEMICONDUCTOR-ELECTROLYTE SYSTEMS [J].

DEGRYSE, R ;

GOMES, WP ;

CARDON, F ;

VENNIK, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :711-712

[8]

DIQUARTO F, 1986, BER BUNSEN PHYS CHEM, V90, P549, DOI 10.1002/bbpc.19860900611

[9]

HELLER A, 1977, P ELECTROCHEMICAL SO, V773

[10] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

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