CRYSTAL-GROWTH AND ELECTRICAL PROPERTIES OF MN-DOPED SNTE

被引：7

作者：

INOUE, M ^{[1
]}

YAGI, H ^{[1
]}

MORISHITA, S ^{[1
]}

机构：

[1] FUKUI UNIV, DEPT APPL PHYS, FUKUI 910, JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1973年 / 34卷 / 02期

关键词：

D O I：

10.1143/JPSJ.34.562

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：562 / 562

页数：1

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[1] WEAK-FIELD MAGNETORESISTANCE AND VALENCE-BAND STRUCTURE OF SNTE
ALLGAIER, RS
HOUSTON, B
[J]. PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (06): : 2186 - +
[2] METALLIC INCLUSIONS AND CELLULAR SUBSTRUCTURE IN PB1-XSNX TE SINGLE CRYSTALS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (02) : 260 - &
[3] EPR STUDIES ON MN-DOPED SNTE AT ROOM-TEMPERATURE
INOUE, M
YAGI, H
KAMINO, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 34 (02) : 561 - 561
[4] STUDY OF MAGNETIC INTERACTIONS IN (SNTE-MNTE) AND (SNTE-EUTE) SYSTEMS
MATHUR, MP
DEIS, DW
JONES, CK
PATTERSON, A
CARR, WJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (04) : 1693 - +