DIELECTRIC MEMORY EFFECTS OF (MN, FE, CO, CU, EU) DOPED PLZT CERAMICS

被引：13

作者：

BURKHANOV, AI ^{[1
]}

SHILNIKOV, AV ^{[1
]}

DIMZA, V ^{[1
]}

机构：

[1] UNIV LATVIA,INST SOLID STATE PHYS,RIGA 226063,LATVIA

来源：

FERROELECTRICS | 1992年 / 131卷 / 1-4期

关键词：

PLZT CERAMICS; DOPING; 3D ELEMENTS; DIELECTRIC MEMORY EFFECTS;

D O I：

10.1080/00150199208223425

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Dielectric memory effects-effect of thermal memory (ETM) and effect of electric field memory (EFM) have been studied in (Mn, Fe, Co, Cu, Eu) doped PLZT ceramics. The obtained results have been discussed on the assumption that the ETM and EFM depends on relaxation of domain and interphase (polar and nonpolar) boundaries influenced by changes of defects conditions at doping.

引用

页码：267 / 273

页数：7