GAS-PHASE ETCHING OF SILICON WITH CHLORINE

被引:18
作者
DISMUKES, JP
ULMER, R
机构
关键词
D O I
10.1149/1.2408126
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:634 / &
相关论文
共 15 条
[1]  
BEAM K, 1963, J ELECTROCHEM SOC, V110, P2656
[2]   IN SITU ETCHING OF SILICON SUBSTRATES PRIOR TO EPITAXIAL GROWTH [J].
CHU, TL ;
GRUBER, GA ;
STICKLER, R .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (2P1) :156-&
[3]  
DISMUKES JP, 1970, FEB ATL M AM I CHEM
[4]  
GLASSTONE S, 1941, THEORY RATE PROCESSE, P369
[5]   VAPOR-PHASE POLISHING OF SILICON WITH H2-HBR GAS MIXTURES [J].
GREGOR, LV ;
BALK, P ;
CAMPAGNA, FJ .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (04) :327-&
[6]  
GUALTIERI JG, 1960, Z KRISTALLOGR, V114, P9
[7]  
HAGA LJ, 1968, Patent No. 3398033
[8]  
JOST W, 1952, DIFFUSION SOLIDS LIQ, P425
[9]  
LANG GA, 1963, RCA REV, V24, P488
[10]   ETCHING AND POLISHING BEHAVIOR OF GE AND SI WITH HI [J].
REISMAN, A ;
BERKENBLIT, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) :812-+