CHARACTERIZATION OF STRUCTURAL DEFECTS IN THE PRESENCE OF IN2O3 IN CUINSE2 PREPARED BY SPRAY PYROLYSIS

Structural defects in CuInSe2 films prepared by chemical spray pyrolysis are characterized by electrical resistivity, Hall mobility and optical absorption. This work revealed that incorporation of oxygen contributes to the formation of intrinsic defects, thus reducing the resistivity and mobility of the material. Optical absorption coefficients between 104 and 105 cm-1 were measured at 1.02 eV. Two distinct acceptor defect levels were measured at 20 and 110 meV above the valence band. A third level, believed to be a deep donor level, is located 220 meV below the conduction band. © 1990.