CONTINUOUSLY VOLTAGE-TUNABLE LINE ABSORPTION IN SURFACE QUANTIZATION

[1] ENERGY AND LIFETIME OF SPACE-CHARGE-INDUCED LOCALIZED STATES [J]. PHYSICAL REVIEW, 1968, 168 (03): : 832 - +

[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &

[3] OPTICAL ABSORPTION DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J]. PHYSICAL REVIEW, 1967, 159 (03): : 632 - +

[4] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &

[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[6] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[7] GRAVE AS, 1967, PHYSICS TECHNOLOGY S

[8] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[9] CAPACITANCE OBSERVATIONS OF LANDAU LEVELS IN SURFACE QUANTIZATION [J]. PHYSICAL REVIEW LETTERS, 1968, 21 (04) : 212 - &

[10] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH6

[1] ENERGY AND LIFETIME OF SPACE-CHARGE-INDUCED LOCALIZED STATES [J]. PHYSICAL REVIEW, 1968, 168 (03): : 832 - +

[2] MOBILITY ANISOTROPY AND PIEZORESISTANCE IN SILICON P-TYPE INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 1923 - &

[3] OPTICAL ABSORPTION DUE TO SPACE-CHARGE-INDUCED LOCALIZED STATES [J]. PHYSICAL REVIEW, 1967, 159 (03): : 632 - +

[4] NEGATIVE FIELD-EFFECT MOBILITY ON (100) SI SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (18) : 797 - &

[5] MAGNETO-OSCILLATORY CONDUCTANCE IN SILICON SURFACES [J]. PHYSICAL REVIEW LETTERS, 1966, 16 (20) : 901 - &

[6] QUANTUM MECHANICAL CALCULATION OF CARRIER DISTRIBUTION AND THICKNESS OF INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR [J]. SOLID-STATE ELECTRONICS, 1970, 13 (09) : 1301 - +

[7] GRAVE AS, 1967, PHYSICS TECHNOLOGY S

[8] DENSITY OF SIO2-SI INTERFACE STATES - (MOS DEVICES SI OXIDATION 100 DEGREES C O2 + 80 PPM H2O FERMI LEVEL E) [J]. APPLIED PHYSICS LETTERS, 1966, 8 (02) : 31 - &

[9] CAPACITANCE OBSERVATIONS OF LANDAU LEVELS IN SURFACE QUANTIZATION [J]. PHYSICAL REVIEW LETTERS, 1968, 21 (04) : 212 - &

[10] MANY A, 1965, SEMICONDUCTOR SURFAC, pCH6