ELECTRICAL AND SWITCHING PROPERTIES OF INSE AMORPHOUS THIN-FILMS

被引：50

作者：

KENAWY, MA ^{[1
]}

ELSHAZLY, AF ^{[1
]}

AFIFI, MA ^{[1
]}

ZAYED, HA ^{[1
]}

ELZAHID, HA ^{[1
]}

机构：

[1] AIN SHAMS UNIV,FAC EDUC,CAIRO,EGYPT

来源：

THIN SOLID FILMS | 1991年 / 200卷 / 02期

关键词：

D O I：

10.1016/0040-6090(91)90192-Z

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work electrical and switching properties of InSe thin films have been studied. The semiconductor compound InSe was obtained by direct synthesis from stoichiometric amounts of spectroscopically pure indium and selenium. By slow cooling of the synthesized InSe a polycrystalline material is obtained. The amorphous films were obtained by thermal evaporation under vacuum of the polycrystalline material on glass or pyrographite substrates. From electrical measurements, it was found that for all films the dark electrical resistivity decreases with an increase in film thickness and temperature. The InSe compound exhibits non-linear I-V characteristics and switching phenomena. The threshold voltage decreases with increasing annealing temperature and increases with increasing film thickness.

引用

页码：203 / 210

页数：8

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