EFFECT OF HEAT TREATMENT ON 1.370 EV PHOTOLUMINESCENCE EMISSION BAND IN ZN-DOPED GAAS

被引：26

作者：

HWANG, CJ

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来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 09期

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D O I：

10.1063/1.1656965

中图分类号：

O59 [应用物理学];

学科分类号：

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页码：4307 / &

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