NOVEL CMOS CURRENT SCHMITT TRIGGER

被引：16

作者：

WANG, Z

GUGGENBUHL, W

机构：

[1] ETH, Switzerland

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 24期

关键词：

Semiconductor Devices; MOS; -; Transistors; Field Effect;

D O I：

10.1049/el:19881034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel CMOS current Schmitt trigger based on current mirrors is presented, using only seven MOS transistors. The significant feature of the circuit is that one threshold current is controlled by a bias current and the other by an MOS transistor dimension, depending on the circuit implementation. A design example and the simulation results are given.

引用

页码：1514 / 1516

页数：3