UNDULATION SPECTRA OF GAP ASSOCIATED WITH ISOELECTRONIC TRAP N

被引：21

作者：

HOPFIELD, JJ

KUKIMOTO, H

DEAN, PJ

机构：

来源：

关键词：

D O I：

10.1103/PhysRevLett.27.139

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：139 / &

共 5 条

[1] DEAN PJ, 1970, J APPL PHYS, V41, P3471
[2] TOWARD A THEORY OF ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS
FAULKNER, RA
[J]. PHYSICAL REVIEW, 1968, 175 (03): : 991 - &
[3] HOPFIELD JJ, 1968, P INT C 2 6 SEMICOND, P786
[4] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
THOMAS, DG
HOPFIELD, JJ
[J]. PHYSICAL REVIEW, 1966, 150 (02): : 680 - &
[5] PAIR SPECTRA + EDGE EMISSION IN GALLIUM PHOSPHIDE
THOMAS, DG
GERSHENZON, M
TRUMBORE, FA
[J]. PHYSICAL REVIEW, 1964, 133 (1A): : A269 - A279