STRAIN-DEPENDENT ELECTRON-PARAMAGNETIC RESONANCE AND SPIN-VALLEY COUPLING OF SHALLOW TRIPLET SN DONORS IN GAP

[1] BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101

[2] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3

[3] SPIN RESONANCE OF CONDUCTION ELECTRONS IN INSB [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (02) : 62 - 64

[4] BLUM SE, 1968, J ELECTROCHEM SOC, V115, P394

[5] Optical properties of the donor tin in gallium phosphide [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4062 - 4076

[6] ELECTRON SPIN RESONANCE IN NORMAL-TYPE GAAS [J]. PHYSICS LETTERS, 1963, 7 (01): : 23 - 24

[7] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 309 - 311

[8] GOLDSTEIN B, 1966, SEMICONDUCT SEMIMET, V2, P189

[9] HAM FS, 1965, PHYS REV, V138, P1727

[10] ESR-RESONANCES IN DOPED GAAS AND GAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) : 2419 - +

[1] BALSLEV I, 1966, J PHYS SOC JPN, VS 21, P101

[2] Bass S. J., 1968, Journal of Crystal Growth, V3-4Spe, P286, DOI 10.1016/0022-0248(68)90155-3

[3] SPIN RESONANCE OF CONDUCTION ELECTRONS IN INSB [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (02) : 62 - 64

[4] BLUM SE, 1968, J ELECTROCHEM SOC, V115, P394

[5] Optical properties of the donor tin in gallium phosphide [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (10): : 4062 - 4076

[6] ELECTRON SPIN RESONANCE IN NORMAL-TYPE GAAS [J]. PHYSICS LETTERS, 1963, 7 (01): : 23 - 24

[7] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 309 - 311

[8] GOLDSTEIN B, 1966, SEMICONDUCT SEMIMET, V2, P189

[9] HAM FS, 1965, PHYS REV, V138, P1727

[10] ESR-RESONANCES IN DOPED GAAS AND GAP [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (10) : 2419 - +