OBSERVATIONS OF [111] ATOMIC PLANES IN SILICON

被引：6

作者：

PHILLIPS, VA

HUGO, JA

机构：

[1] General Electric Research, Development Center

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 02期

关键词：

D O I：

10.1063/1.1652510

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using a Philips EM300 electron microscope and chemically thinned slices cut from a single crystal of silicon, the {111} atomic planes of 3.138-Å spacing have been imaged. A two-beam tilted illumination technique was employed. © 1968 The American Institute of Physics.

引用

页码：67 / &