ION-IMPLANTED P-N-JUNCTION INDIUM-PHOSPHIDE IMPATT DIODES

[1] FAIRMAN RD, 1976, 6TH P INT S GALL ARS, P45

[2] KENYON ND, 1970, GMTT INT S, P300

[3] MOLODYAN IP, 1975, SOV PHYS SEMICOND+, V8, P879

[4] EXPERIMENTAL EVALUATION OF NOISE PARAMETERS IN GUNN AND AVALANCHE OSCILLATORS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1972, MT20 (07) : 425 - &

[5] THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 314 - 324

[1] FAIRMAN RD, 1976, 6TH P INT S GALL ARS, P45

[2] KENYON ND, 1970, GMTT INT S, P300

[3] MOLODYAN IP, 1975, SOV PHYS SEMICOND+, V8, P879

[4] EXPERIMENTAL EVALUATION OF NOISE PARAMETERS IN GUNN AND AVALANCHE OSCILLATORS [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1972, MT20 (07) : 425 - &

[5] THEORETICAL AND EXPERIMENTAL STUDY OF GAAS IMPATT OSCILLATOR EFFICIENCY [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (01) : 314 - 324