A VOLTAGE-CONTROLLABLE LINEAR MOS TRANSCONDUCTOR USING BIAS OFFSET TECHNIQUE

被引：113

作者：

WANG, ZH

GUGGENBUHL, W

机构：

[1] Institute of Electronics. Department of Electrical Engineering, Swiss Federal Institute of Technology

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1990年 / 25卷 / 01期

关键词：

D O I：

10.1109/4.50321

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

— A linear large-signal MOS transconductor is described with the gain adjustable linearly by a voltage. A perfect linear transfer characteristic is obtained by two cross-coupled differential transistor pairs operating in saturation pairwise at unequal bias, offering offset-free operation, with both differential or single-ended input and differential output. Single-ended output is achievable by use of a current mirror. The nonlinearity caused by mobility reduction, channel-length modulation, mismatch, etc. is discussed. A test circuit with transconductance of 6.25 μmho has been built with 3-μm MOS components and a linearity error of less than ± 1 percent was measured for an input voltage range from -4 to 4 V. © 1990 IEEE

引用

页码：315 / 317

页数：3

共 6 条

[1] FLOATING VOLTAGE-CONTROLLED RESISTORS IN CMOS TECHNOLOGY [J].