MAGNETOOPTICAL STUDY OF GA0.47IN0.53AS-INP UNDER HYDROSTATIC-PRESSURE

被引:4
作者
BEERENS, J [1 ]
BERNIER, G [1 ]
LASSERRE, S [1 ]
PELENC, D [1 ]
PUETZ, N [1 ]
MINER, CJ [1 ]
机构
[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA
关键词
D O I
10.1139/p91-072
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Far-infrared and interband photoconductivity measurements were carried out on high-purity Ga0.47In0.53As. All the measurements were performed at 4.2 K or below in magnetic fields up to 16 T. Hydrostatic pressure of up to 10 kbar (1 bar = 10(5) Pa) was also applied on the sample during the experiments, using the liquid clamp cell technique. Our work was mainly focussed on the study of conduction-band nonparabolicity. The dependence of the electron effective mass toward energy was accurately determined from our cyclotron resonance measurements and compared with a theoretical description that includes nonparabolicity and magnetopolaron effects. We find that the nonparabolicity coefficient and its variation with pressure are in agreement with the theoretical predictions based on the Kane model, when the contribution of magnetopolaron effect is included in the data analysis. These results are correlated with those obtained in the interband measurements, which have been analysed within a Pidgeon-Brown approach. Some interesting data concerning impurity states were also obtained in our far-infrared photoconductivity measurements. A much richer set of Zeeman-split impurity-related peaks were recorded, as compared with previously published results. The influence of pressure, nonparabolicity, and the magnetopolaron effect on the position of these peaks will be briefly discussed.
引用
收藏
页码:441 / 446
页数:6
相关论文
共 29 条
[1]  
ADAMS AR, 1986, PHYSICA B C AMSTERDA, V130, P401
[2]   INTERBAND MAGNETOABSORPTION OF IN0.53GA0.47AS [J].
ALAVI, K ;
AGGARWAL, RL ;
GROVES, SH .
PHYSICAL REVIEW B, 1980, 21 (03) :1311-1315
[3]   COMMENTS ON THE IDENTIFICATION OF HIGH-ORDER SPECTRAL-LINES OF DONORS IN SEMICONDUCTORS IN INTERMEDIATE MAGNETIC-FIELDS [J].
ARMISTEAD, CJ ;
STRADLING, RA ;
WASILEWSKI, Z .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1989, 4 (07) :557-564
[4]   FAR-INFRARED STUDIES OF CENTRAL-CELL STRUCTURE OF SHALLOW DONORS IN GAAS AND INP [J].
ARMISTEAD, CJ ;
KNOWLES, P ;
NAJDA, SP ;
STRADLING, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (35) :6415-6434
[5]   PHOTOLUMINESCENCE AND DOUBLE-CRYSTAL X-RAY STUDY OF INGAAS/INP - EFFECT OF MISMATCH STRAIN ON BAND-GAP [J].
BASSIGNANA, IC ;
MINER, CJ ;
PUETZ, N .
JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) :4299-4305
[6]   FREQUENCY SHIFTED POLARON COUPLING IN GAINAS HETEROSTRUCTURES [J].
BRUNEL, LC ;
HUANT, S ;
NICHOLAS, RJ ;
HOPKINS, MA ;
BRUMMELL, MA ;
KARRAI, K ;
PORTAL, JC ;
RAZEGHI, M ;
CHENG, KY ;
CHO, AY .
SURFACE SCIENCE, 1986, 170 (1-2) :542-548
[7]   POLARON EFFECTS IN CYCLOTRON-RESONANCE ABSORPTION OF INSB [J].
DICKEY, DH ;
JOHNSON, EJ ;
LARSEN, DM .
PHYSICAL REVIEW LETTERS, 1967, 18 (15) :599-&
[8]  
EVRARD R, 1984, NATO ASI SER B, V108, P185
[9]  
GOLUBEV VG, 1988, SOV PHYS SEMICOND+, V22, P896
[10]   K-].P-] PERTURBATION-THEORY IN III-V COMPOUNDS AND ALLOYS - RE-EXAMINATION [J].
HERMANN, C ;
WEISBUCH, C .
PHYSICAL REVIEW B, 1977, 15 (02) :823-833