MOLTEN METAL ETCHES FOR THE ORIENTATION OF SEMICONDUCTORS BY OPTICAL TECHNIQUES

[1] BAILEY GL, 1952, J I MET, V80, P57

[2] Barrett CS., 1943, STRUCTURE METALS

[3] BRODER JD, 1956, OCT EL SOC M CLEV

[4] EFFECT OF THE POLARITY OF THE III-V INTERMETALLIC COMPOUNDS ON ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 331 - 333

[5] FAUST JW, 1956, MAY EL SOC M SAN FRA

[6] FAUST JW, UNPUB J PHYS CHEM SO

[7] FAUST JW, 1959, METHODS EXPT PHYSICS, V6

[8] ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 433 - 436

[9] SIMPLIFIED LIGHT REFLECTION TECHNIQUE FOR ORIENTATION OF GERMANIUM AND SILICON CRYSTALS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1956, 27 (12) : 1082 - 1083

[10] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[1] BAILEY GL, 1952, J I MET, V80, P57

[2] Barrett CS., 1943, STRUCTURE METALS

[3] BRODER JD, 1956, OCT EL SOC M CLEV

[4] EFFECT OF THE POLARITY OF THE III-V INTERMETALLIC COMPOUNDS ON ETCHING [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (02) : 331 - 333

[5] FAUST JW, 1956, MAY EL SOC M SAN FRA

[6] FAUST JW, UNPUB J PHYS CHEM SO

[7] FAUST JW, 1959, METHODS EXPT PHYSICS, V6

[8] ETCHING BEHAVIOR OF THE (110) AND (100) SURFACES OF INSB [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 433 - 436

[9] SIMPLIFIED LIGHT REFLECTION TECHNIQUE FOR ORIENTATION OF GERMANIUM AND SILICON CRYSTALS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1956, 27 (12) : 1082 - 1083

[10] Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700