INAS DEEP QUANTUM-WELL STRUCTURES AND THEIR APPLICATION TO HALL ELEMENTS

被引：29

作者：

KUZE, N

NAGASE, K

MURAMATSU, S

MIYA, S

IWABUCHI, T

ICHII, A

SHIBASAKI, I

机构：

[1] Central laboratory, Asahi Chemical Industry Co., Ltd., Fuji, Shizuoka, 416

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(95)80150-B

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have investigated new InAs deep quantum well structures (InAs DQWs) made from InAs/AlGaAsSb materials on GaAs substrates by molecular beam epitaxy (MBE). In the InAs DQWs, AlGaAsSb layers are lattice matched to InAs. High electron mobilities of more than 20000 cm(2)/V . s at room temperature have been obtained in a wide range of substrate temperature and Al composition of AlxGa1-xAsSb layers (0 less than or equal to x less than or equal to 10.8). The InAs DQWs have been applied to Hall elements (HEs) for the first time. The new type of HEs with InAs DQWs (InAs DQWHEs) show superior characteristics, such as output voltage as high as 520 mV (at V-in = 6 V, B = 0.1 T), small dependence of input resistance on temperature and good reliability for practical use.

引用

页码：1307 / 1312

页数：6

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