HIGH-POWER CW VERTICAL-CAVITY TOP SURFACE-EMITTING GAAS QUANTUM-WELL LASERS

被引：58

作者：

TELL, B ^{[1
]}

LEE, YH ^{[1
]}

BROWNGOEBELER, KF ^{[1
]}

JEWELL, JL ^{[1
]}

LEIBENGUTH, RE ^{[1
]}

ASOM, MT ^{[1
]}

LIVESCU, G ^{[1
]}

LUTHER, L ^{[1
]}

MATTERA, VD ^{[1
]}

机构：

[1] AT&T BELL LABS,STC,BREININGSVILLE,PA 18031

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104038

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have devised a novel vertical-cavity top surface-emitting GaAs quantum well laser structure which operates at 0.84 μm. The laser combines peripheral current injection with efficient heat removal and uses only the epitaxially grown semiconductor layers for the output mirrors. The structure is obtained by a patterned deep H+ implantation and anneal cycle which maintains surface conductivity while burying a high resistance layer. Peripheral injection of current occurs from the metallized contact area into the nonimplanted nonmetallized emission window. For 10-μm-diam emitting windows, ∼4 mA thresholds with continuous-wave (cw) room-temperature output powers ≳1.5 mW are obtained. Larger diameter emitting windows have maximum cw output powers greater than 3 mW. These are the highest cw powers achieved to date in current injected vertical-cavity surface-emitting lasers.

引用

页码：1855 / 1857

页数：3

共 9 条

[1]

CHANGHASNAIN CJ, 1990, APPL PHYS LETT, V57, P18

[2] LOW THRESHOLD PLANARIZED VERTICAL-CAVITY SURFACE-EMITTING LASERS [J].